Synthesis and Electrical Properties of ZnO-ITO and Al-ITO thin Film by Spin Coating Technique Through Sol Gel Process

Hardeli, Hardeli and Sanjaya, Hary and Zainul, Rahadian (2016) Synthesis and Electrical Properties of ZnO-ITO and Al-ITO thin Film by Spin Coating Technique Through Sol Gel Process. Journal of Chemical and Pharmaceutical Research, 8 (8). pp. 915-921. ISSN 0975-7384 (Unpublished)

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Abstract

In this research we has investigated synthesis and electrical properties of ITO (Indium Tin Oxide) thin layers doping Aluminum (Al) and ZnO with spin-coating technique through sol-gel process and calcined at ±550 ºC for 1 hour. Effect of Al and ZnO doping on the conductivity of ITO with 0%, 1%, 3% and 5% w/v dopant concentration and the number of coating (4 and 5 layers) has reported. ITO-Al has 2 phases, these are rhombohedral and cubic, the crystal size is 67.31 nm. Meanwhile, ITO-ZnO are rhombohedral, cubic (bixbyite) and hexagonal (wurtzite), with crystallite size value was 67.4 nm. The surface morphology data indicated film thickness was 3.4 µm (ITO-Al) and 0.974 nm (ITO-ZnO). The electrical properties shows that the optimum film in 4 layers coating with the addition of 5% doping value was 17 kΩ/cm2 (ITO-Al) and 5-layered by addition of 5% of doping ZnO (80.800 kΩ/cm ). Meanwhile, ITO-Al thin film with 4 layers coating without doping was 9.331 kΩ / cm2 , and for ITO-ZnO (5 layers) coating without doping was 11.796 kΩ/cm2 . Al and ZnO doping decrease the electrical conductivity of ITO

Item Type: Article
Subjects: Q Science > QD Chemistry
Divisions: Fakultas Matematika dan Ilmu Pengetahuan Alam > Kimia - S1
Depositing User: Mrs. Wiwi Sartika
Date Deposited: 06 Dec 2016 07:39
Last Modified: 07 Jun 2020 13:48
URI: http://repository.unp.ac.id/id/eprint/605

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