Development of a new giant magnetoresistance material based on organic material

Mitra, Djamal and Ramli, Ramli and Sparisoma, Viridi and Khairurrijal, Khairurrijal (2011) Development of a new giant magnetoresistance material based on organic material. In: 2nd International Conference on Instrumentation, Communications, Information Technology, and Biomedical Engineering, 8-9 November 2011, Bandung, Indonesia.


Download (673kB) | Preview
Official URL:


Giant magnetoresistance (GMR) material has great potential as next generation magnetic field sensing devices, have magnetic properties and high electrical potential to be developed into various applications such as: magnetic field sensor measurements, current measurements, linear and rotational position sensor, data storage, head recording, and non-volatile magnetic random access memory (MRAM). Today, the new GMR materials based on organic material obtained after allowing for Organic Magnetoresistance (OMAR) was found in OLEDs (organic light-emitting diodes). This organic material is used as a spacer layer in GMR devices with spin-valve structures. Traditionally, metals and semiconductors are used as a spacer layer in spin-valve. However, several factors such as spin scattering caused by large atoms of the spacer material and the interface scattering of ferromagnetic with a spacer, will limit the efficiency of spin-valve. In this paper, we describe a new GMR materials based on organic material in form of NiCoFe/Alq3/NiCoFe that we have developed in our laboratory.

Item Type: Conference or Workshop Item (Paper)
AuthorMitra, DjamalUNSPECIFIED
AuthorRamli, RamliUNSPECIFIED
AuthorSparisoma, ViridiUNSPECIFIED
AuthorKhairurrijal, KhairurrijalUNSPECIFIED
Subjects: Q Science > QC Physics
Divisions: Fakultas Matematika dan Ilmu Pengetahuan Alam > Pendidikan Fisika - S1
Depositing User: Mr. Ramli Ramli
Date Deposited: 30 Oct 2018 02:25
Last Modified: 30 Oct 2018 02:25

Actions (login required)

View Item View Item